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1 MRF9130L MRF9130Lr3 MRF9130Lsr3 motorola rf device data the rf subCmicron mosfet line nCchannel enhancementCmode lateral mosfets designed for gsm and edge base station applications with frequencies from 921 to 960 mhz, the high gain and broadband performance of these devices make them ideal for largeCsignal, commonCsource amplifier applica- tions in 28 volt base station equipment. ? typical performance for gsm frequencies, 921 to 960 mhz, 28 volts output power @ p1db 135 watts power gain 16.5 db @ 130 watts output power efficiency 48% @ 130 watts output power ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 28 vdc, all frequency band, 130 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent largeCsignal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drainCsource voltage v dss 65 vdc gateCsource voltage v gs +15, C0.5 vdc total device dissipation @ t c = 25 c derate above 25 c p d 298 1.7 watts w/ c storage temperature range t stg C65 to +200 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model c7 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.6 c/w note C caution C mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF9130L/d semiconductor technical data gsm/edge 921C960 mhz, 130 w, 28 v lateral nCchannel rf power mosfets case 465C06, style 1 (niC780) (MRF9130L) case 465aC06, style 1 (niC780s) (MRF9130Lsr3) ? motorola, inc. 2002 rev 0
MRF9130L MRF9130Lr3 MRF9130Lsr3 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vds, v gs = 0 vdc) i dss 10 adc zero gate voltage drain leakage current (v ds = 28 vds, v gs = 0 vdc) i dss 1 adc gateCsource leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 450 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1000 madc) v gs(q) 3.6 vdc drainCsource onCvoltage (v gs = 10 vdc, i d = 3 adc) v ds(on) 0.2 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 9 adc) g fs 12 s dynamic characteristics (1) output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss 110 pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss 4.4 pf functional tests (in motorola test fixture) power output, 1 db compression point (v dd = 28 vdc, i dq = 1000 ma, f = 921 and 960 mhz) p 1db 120 135 w commonCsource amplifier power gain (v dd = 28 vdc, p out = 130 w, i dq = 1000 ma, f = 921 and 960 mhz) g ps 15.5 16.5 db drain efficiency (v dd = 28 vdc, p out = 130 w, i dq = 1000 ma, f = 921 and 960 mhz) 43 48 % input return loss (v dd = 28 vdc, p out = 130 w, i dq = 1000 ma, f = 921 and 960 mhz) irl C12 C9 db output mismatch stress (v dd = 28 vdc, p out = 130 w cw, i dq = 1000 ma, f = 921 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally input matched.
3 MRF9130L MRF9130Lr3 MRF9130Lsr3 motorola rf device data figure 1. 921C960 mhz test circuit schematic table 1. 921C960 mhz test circuit component designations and values designators description c1, c4 10 f, 35 v tantalum capacitors, vishayCsprague #293d106x9035d c2, c5 100 nf chip capacitors (1206), avx #1206c104katda c3, c8, c21, c22 22 pf, 100b chip capacitors, atc #100b220c c6 33 pf, 100b chip capacitor, atc #100b330jw c7 1.0 pf, 100b chip capacitor, atc #100b1r0bw c9 4.7 pf, 100b chip capacitor, atc #100b4r7bw c10 8.2 pf, 100b chip capacitor, atc #100b8r2cw c11 10 pf, 100b chip capacitor, atc #100b100gw c12, c13 12 pf, 100b chip capacitors, atc #100b120gw c14, c15 2.7 pf, 100b chip capacitors, atc #100b2r7bw c16, c17, c18 3.9 pf, 100b chip capacitors, atc #100b3r9bw c19 3.3 pf, 100b chip capacitor, atc #100b3r3bw c20 1.8 pf, 100b chip capacitor, atc #100b1r8bw r1 18 k , 1/8 w chip resistor (1206) r2 10 k , 1/8 w chip resistor (1206) r3 1.0 k , 1/8 w chip resistor (1206) z1 0.117 x 0.600 microstrip z2 0.117 x 1.851 microstrip z3 1.074 x 1.068 microstrip z4 1.074 x 0.980 microstrip z5 0.117 x 1.933 microstrip z6 0.117 x 0.605 microstrip substrate taconic tlx8, thickness 0.8 mm rf connectors, type n, macom #3052C1648C10
MRF9130L MRF9130Lr3 MRF9130Lsr3 4 motorola rf device data figure 2. 921C960 mhz test circuit component layout MRF9130L
5 MRF9130L MRF9130Lr3 MRF9130Lsr3 motorola rf device data typical characteristics figure 3. power gain and input return loss versus frequency figure 4. power gain and efficiency versus output power figure 5. power gain versus output power figure 6. power gain versus output power figure 7. power gain versus output power
MRF9130L MRF9130Lr3 MRF9130Lsr3 6 motorola rf device data figure 8. evm and efficiency versus output power figure 9. spectral regrowth versus output power note: curves on figure 8 and 9 gathered on a gsm edge optimized text fixture.
7 MRF9130L MRF9130Lr3 MRF9130Lsr3 motorola rf device data figure 10. series equivalent input and output impedance f mhz z in ? z ol * ? 880 920 960 0.63 + j1.66 0.82 + j2.18 0.67 + j1.88 0.82 + j0.36 0.72 + j0.30 0.74 + j0.37 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. 1000 0.86 + j2.56 0.69 + j0.79 ?
MRF9130L MRF9130Lr3 MRF9130Lsr3 8 motorola rf device data notes
9 MRF9130L MRF9130Lr3 MRF9130Lsr3 motorola rf device data notes
MRF9130L MRF9130Lr3 MRF9130Lsr3 10 motorola rf device data notes
11 MRF9130L MRF9130Lr3 MRF9130Lsr3 motorola rf device data package dimensions (niC780) case 465C06 issue f

d g k c e h s f q 2x b b (flange)

aa (flange) t n (lid) m (insulator) (insulator) r (lid) (MRF9130L) (niC780s) (MRF9130Lsr3) case 465aC06 issue f

d k c e h f u (flange) 4x z (lid) 4x
b b (flange) 2x

a a (flange) t n (lid) m (insulator) r (lid) s (insulator)
MRF9130L MRF9130Lr3 MRF9130Lsr3 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including t ypicals must be validated for each customer application by customers technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & t rademark office. all other product or service names are the property of t heir respective owners. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1C303C675C2140 or 1C800C441C2447 japan : motorola japan ltd.; sps, technical information center, 3C20C1, minamiCaz abu. minatoCku, tokyo 106C8573 japan. 8 1C3C3440C3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t., hong ko ng. 852C26668334 technical information center: 1C800C521C6274 home page : http://www .motorola.com/semiconductors/ MRF9130L/d ?

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